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Antisite defect qubits in monolayer transition metal dichalcogenides

INV-21027 Background The ongoing second quantum revolution calls for exploiting the laws of quantum mechanics in transformative new technologies for computation and quantum information science (QIS) applications. Spin-qubits based on solid-state defects have emerged as promising candidates because these qubits can be initialized, selectively controlled,...

Published: 1/27/2025 | Updated: 3/21/2024 | Inventor(s): Jeng-Yuan Tsai, Jinbo Pan, Hsin Lin, Arun Bansil, Qimin Yan

Keywords(s): 2D materials, Antisite defect in TMD, Quantum computing, Quantum information technologies, Quantum sensors, Solid-state spin-defect

Category(s): -Sensors, Technology Classifications > 2. Physical Science > Advanced materials/Nanomaterials, Technology Classifications > 2. Physical Science > Electronics/Semiconductors, Technology Classifications > 2. Physical Science > Manufacturing